Device families grouped by repetitive voltage class and chip diameter
| UDRM, URRM | 19 mm | 24 mm | 30 mm | 38 mm | 55 mm | 80 mm |
|---|---|---|---|---|---|---|
| 800 V | T 143‑1000 T 143‑1250 | T 153‑1600 T 153‑2000 | ||||
| 1000 V | T 173‑3200 | |||||
| 1600 V | T 151‑100 | |||||
| 1800 V | T 161‑160 T 161‑200 | T 271‑320 T 233‑500 | T 243‑630 T 243‑800 | T 253‑1000 T 253‑1250 | T 273‑2500 | |
| 2400 V | T 371‑320 T 333‑320 | |||||
| 2600 V | T 373‑2000 | |||||
| 2800 V | T 353‑1000 | |||||
| 3000 V | T 343‑500 T 343‑630 | |||||
| 3600 V | T 443‑500 | T 353‑800 T 453‑630 T 453‑800 | T 473‑1600 | |||
| 4200 V | T 553‑800 | |||||
| 4400 V | T 553‑500 T 553‑630 | T 573‑1250 | ||||
| 4600 V | T 543‑400 | |||||
| 6000 V | T 753‑500 |
Example order code
| 1. | 2. | 3. | 4. | 5. | 6. |
|---|---|---|---|---|---|
| T | 253 | 1250 | 18 | 7 | 3 |
- Phase‑control thyristor
- Design version
- Mean on‑state current ITAV, A
- Voltage code — 18 → 1800 V etc.
- Group for critical rate of off‑state voltage (du/dt)crit (6 ≥ 500 V/µs; 7 ≥ 1000 V/µs)
- Turn‑off time group tq (du/dt = 50 V/µs; C2 ≤ 630 µs; 1 ≤ 500 µs; H2 ≤ 400 µs; K2 ≤ 320 µs; 2 ≤ 250 µs; P2 ≤ 200 µs; 3≤ 160 µs; X2 ≤ 125 µs; 4 ≤ 100 µs)