Device families by repetitive voltage class and disc diameter

U_DRM, U_RRM	32 mm (30 mm chip)
1100 V	TL 271‑250 TL 271‑320 TL 233‑400 TL 233‑500

Example order code

1.	2.	3.	4.	5.	6.
TL	271	320	11	7	0

Avalanche thyristor (series prefix “TL”)
Design version
Mean on‑state current I_TAV, A
Voltage code — e.g. 11 → 1100 V
Group for critical rate of off‑state voltage (du/dt)_crit (6 ≥ 500 V/µs, 7 ≥ 1000 V/µs)
Turn‑off‑time group t_q @ 50 V/µs (e.g. X2 ≤ 125 µs; 4 ≤ 100 µs; B3 ≤ 80 µs; 0 = not limited)

Type	U_DRM, U_RRM (V range)	I_TAV (A @ T_C)	I_TSM (kA / 10 ms)	U_TM/I_TM (V / A @ 25 °C)	U_T(TO) (V)	R_T (mΩ)	t_q (µs @ 50 V/µs)	P_RSM (10 µs) kW	(di/dt)_crit non‑rep/rep (A / µs)	(du/dt)_crit (V / µs)	I_GT/U_GT (A / V)	R_thJC (°C / W)	T_jmax (°C)	Fig.
Type	U_DRM, U_RRM (V range)	I_TAV (A @ T_C)	I_TSM (kA / 10 ms)	U_TM/I_TM (V / A @ 25 °C)	U_T(TO) (V)	R_T (mΩ)	t_q (µs @ 50 V/µs)	P_RSM (10 µs) kW	(di/dt)_crit non‑rep/rep (A / µs)	(du/dt)_crit (V / µs)	I_GT/U_GT (A / V)	R_thJC (°C / W)	T_jmax (°C)	Fig.	TL 271‑250	600 – 1100	250 (104)	8.0	1.9 / 785	1.20	0.90	80; 100; 125	40.0	250 / 125	500; 1000	0.3 / 2.5	0.080	140	3
TL 271‑320	600 – 1100	320 (104)	9.0	1.62 / 1005	0.90	0.63	80; 100; 125	40.0	250 / 125	500; 1000	0.3 / 2.5	0.080	140	3
TL 233‑400	600 – 1100	400 (102)	8.0	2.2 / 1256	1.20	0.90	80; 100; 125	40.0	250 / 125	500; 1000	0.3 / 2.5	0.045	140	7
TL 233‑500	600 – 1100	500 (102)	9.0	1.9 / 1570	0.90	0.63	80; 100; 125	40.0	250 / 125	500; 1000	0.3 / 2.5	0.045	140	7